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Articles by author: W. Witthuhn

• A Deep Erbium-Related Bandgap State in 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p487)
• Acceptor-Donor-Interactions in Silicon Studied by the Pac-Method
  Published in: Defects in Semiconductors 14 (p557)
• Acceptor-Hydrogen Complexes in InAs
  Published in: Defects in Semiconductors 18 (p963)
• Acceptors and Donors in the Wide-Gap Semiconductors ZnO and SnO₂
  Published in: Defects in Semiconductors 14 (p863)
• Band Gap States of Cr in the Lower Part of the SiC Band Gap
  Published in: Silicon Carbide and Related Materials 2000 (p471)
• Defects in Silicon after Proton and Electron Irradiation
  Published in: Defects in Semiconductors 15 (p1251)
• Europium Induced Deep Levels in Hexagonal Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p659)
• Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen
  Published in: Silicon Carbide and Related Materials - 1999 (p933)
• Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
  Published in: Silicon Carbide and Related Materials 2003 (p791)
• Iron- and Chromium-Indium Pairs in Silicon
  Published in: Shallow Impurities in Semiconductors IV (p281)
• Iron-, Manganese- and Chromium-Indium Pairs in Silicon
  Published in: Shallow Impurities in Semiconductors V (p147)
• Kinetics of In-H and Cd-H Complexes in Silicon
  Published in: Defects in Semiconductors 16 (p15)
• Level Splitting of the Cd-Ground State in Silicon
  Published in: Defects in Semiconductors 15 (p463)
• On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p749)
• Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p639)