Papers by Author: Wolfgang J. Choyke

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Photoluminescence Study of C-H and C-D Centers in 4H SiC
Authors: Song Bai, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, R. Grötzschel, Günter Wagner, Mike F. MacMillan
589
Spontaneous Polarization of 4H SiC Determined from Optical Emissions of 4H/3C/4H-SiC Quantum Wells
Authors: Song Bai, Robert P. Devaty, Wolfgang J. Choyke, Ute Kaiser, Günter Wagner, Mike F. MacMillan
573
Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke
1457
Porous Silicon Carbide as a Membrane for Implantable Biosensors
Authors: A.J. Rosenbloom, Y. Shishkin, D.M. Sipe, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke
1463
Triangular Pore Formation in Highly Doped n-Type 4H SiC
Authors: Y. Shishkin, Wolfgang J. Choyke, Robert P. Devaty
1467
Porous Structure of Anodized p-Type 6H SiC
Authors: Y. Shishkin, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke
1471
Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
Authors: Adam Gali, Peter Deák, E. Rauls, P. Ordejón, F.H.C. Carlsson, Ivan G. Ivanov, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke
443
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
Authors: O. Shigiltchoff, Song Bai, Robert P. Devaty, Wolfgang J. Choyke, Tsunenobu Kimoto, H. McD. Hobgood, Philip G. Neudeck, L.M. Porter
705
A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC
Authors: Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón
535
A Shallow Acceptor Complex in 4H-SiC: AlSiNCAlSi
Authors: Peter Deák, B. Aradi, Adam Gali, Uwe Gerstmann, Wolfgang J. Choyke
523
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