HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Wook Bahng

• 4H-SiC p-n Diode using Internal Ring (IR) Termination Technique
  Published in: Silicon Carbide and Related Materials 2003 (p1041)
• Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination
  Published in: Silicon Carbide and Related Materials 2006 (p861)
• Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p689)
• Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
  Published in: Silicon Carbide and Related Materials - 2002 (p661)
• Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p617)
• Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
  Published in: Silicon Carbide and Related Materials 2009 (p1151)
• Die Bonding Issues on Silicon Carbide Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p875)
• Edge Termination Technique for SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1241)
• Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2007 (p731)
• Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process
  Published in: Silicon Carbide and Related Materials 2007 (p959)
• Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2011 (p1327)
• Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)
  Published in: Silicon Carbide and Related Materials 2006 (p643)
• Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited Si_xN_y
  Published in: Silicon Carbide and Related Materials 2006 (p647)
• Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
  Published in: Silicon Carbide and Related Materials - 1999 (p103)
• Fabrication and Characterization of 4H-SiC pn Diode with Field Limiting Ring
  Published in: Silicon Carbide and Related Materials 2003 (p1013)