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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Y. Shishkin
17 papers on 2 pages:
1
[2]
[next]
A Short Synopsis of the Current Status of Porous SiC and GaN
Published in:
Silicon Carbide and Related Materials 2004
(p251)
Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
Published in:
Silicon Carbide and Related Materials 2006
(p61)
Brillouin Scattering Studies of Surface Acoustic Waves in SiC
Published in:
Silicon Carbide and Related Materials 2003
(p653)
CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
Published in:
Silicon Carbide and Related Materials 2005
(p255)
CVD of 6H-SiC on Non-Basal Quasi Polar Faces
Published in:
Silicon Carbide and Related Materials 2006
(p73)
Growth of 3C-SiC on Si Molds for MEMS Applications
Published in:
Silicon Carbide and Related Materials 2005
(p307)
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
Published in:
Silicon Carbide and Related Materials 2005
(p187)
Increased Growth Rates of 3C-SiC on Si (100) Substrates via HCl Growth Additive
Published in:
Silicon Carbide and Related Materials 2006
(p191)
Interface Defects in n-Type 3C-SiC/SiO
2
: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals
Published in:
Silicon Carbide and Related Materials 2004
(p273)
Microscopic Structure and Electrical Activity of 4H-SiC/SiO
2
Interface Defects : an EPR Study of Oxidized Porous SiC
Published in:
Silicon Carbide and Related Materials 2003
(p1457)
Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC
Published in:
Silicon Carbide and Related Materials 2004
(p277)
Optical Lifetime Measurements in 4H SiC
Published in:
Silicon Carbide and Related Materials - 1999
(p679)
Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC
Published in:
Silicon Carbide and Related Materials - 1999
(p639)
Porous Silicon Carbide as a Membrane for Implantable Biosensors
Published in:
Silicon Carbide and Related Materials 2003
(p1463)
Porous Structure of Anodized p-Type 6H SiC
Published in:
Silicon Carbide and Related Materials 2003
(p1471)
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