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Papers by Author: Yves Monteil

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Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements

Authors: Sandrine Juillaguet, Marcin Zielinski, Carole Balloud, C. Sartel, C. Consejo, Bernard Boyer, Véronique Soulière, Jean Camassel, Yves Monteil

775

Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Authors: Christophe Jacquier, Gabriel Ferro, Carole Balloud, Marcin Zielinski, Jean Camassel, Efstathios K. Polychroniadis, J. Stoemenos, François Cauwet, Yves Monteil

735

Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers

Authors: Sandrine Juillaguet, Carole Balloud, Julien Pernot, C. Sartel, Véronique Soulière, Jean Camassel, Yves Monteil

577

Control of the 2D/3D Transition of Cubic GaN/AlN Nanostructures on 3C-SiC Epilayers

Authors: S. Founta, N. Gogneau, Eugénie Martinez, Gabriel Ferro, Yves Monteil, B. Daudin, H. Mariette

1561

Structural Characterization of Thin 3C-SiC Films Annealed by the Flash Lamp Process

Authors: Efstathios K. Polychroniadis, J. Stoemenos, Gabriel Ferro, Yves Monteil, D. Panknin, Wolfgang Skorupa

351

Investigation of Thick 3C-SiC Films Re-Grown on Thin 35 nm "Flash Lamp Annealed" 3C-SiC Layers

Authors: Gabriel Ferro, D. Panknin, J. Stoemenos, Carole Balloud, Jean Camassel, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa

313

Potential of HMDS/C₃H₈ Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

Authors: Gabriel Ferro, S. Rushworth, Jean Camassel, Sandrine Juillaguet, Carole Balloud, Efstathios K. Polychroniadis, Y. Stoimenos, P. Seigle-Ferrand, Jacques Dazord, Yves Monteil, L.M. Smith

281

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy

Authors: Etienne Bustarret, Daniel Araujo, David Méndez, Francisco M. Morales, F.J. Pacheco, S.I. Molina, Névine Rochat, Gabriel Ferro, Yves Monteil

277

Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates

Authors: Thierry Chassagne, Gabriel Ferro, H. Haas, André Leycuras, Hugues Mank, Yves Monteil

265

Comparison of Different Metal Additives to Si for the Homoepitaxial Growth of 4H-SiC Layers by Vapour-Liquid-Solid Mechanism

Authors: F. Abdoun, Christophe Jacquier, Gabriel Ferro, François Cauwet, Yves Monteil

245