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Articles by keyword: «Atomic Layer Deposition ALD»

• Characteristics of ZrO₂/Al₂O₃ Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method
  Published in: Designing, Processing and Properties of Advanced Engineering Materials (p497)
• Characterization of Aluminium and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition Technique
  Published in: Silicon Carbide and Related Materials 2004 (p701)
• Chemical and Electrical Properties of ZnS Deposited with DEZ and H₂S by Atomic Layer Deposition Method
  Published in: Eco-Materials Processing and Design VIII (p689)
• Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)
  Published in: Silicon Carbide and Related Materials 2006 (p643)
• Fabrication of Oxide/Semiconducting Coaxial Nanotubular Materials Using Atomic Layer Deposition
  Published in: Designing, Processing and Properties of Advanced Engineering Materials (p1165)
• Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate
  Published in: Eco-Materials Processing and Design VIII (p753)
• On the Application of a Thin Ozone Based Wet Chemical Oxide as an Interface for ALD High-k Deposition
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p19)
• Production Worthy ALD in Batch Reactors
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p181)
• Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer
  Published in: Ultra Clean Processing of Semiconductor Surfaces VIII (p53)
• Surface Preparation Techniques for High-k Deposition on Ge Substrates
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p31)
• Ti Coating of Nanocrystalline Diamond by Atomic Layer Deposition
  Published in: Advances in Grinding and Abrasive Technology XIII (p48)
• UV Activated Surface Preparation of Silicon for High-k Dielectric Deposition
  Published in: Ultra Clean Processing of Silicon Surfaces VII (p7)