Papers by Keyword: Electrical Characterisation

Abstract: This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a β_Max of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a β_Max of 69. Double pulse tests reveal state of the art switching with very sharp dV/dt and di/dt. Turn-on is operated at less than 100 ns for an E_ON lower than 4mJ, whereas the turn-off takes longer times due to tail current resulting in E_OFF of 17.2 mJ and 50 mJ for the single BJT and Darlington respectively when operated at high current density. Excellent parallelisation have been achieved.

Abstract: Praseodymium based dielectric thin films have been deposited by Metal-Organic Chemical Vapour Deposition (MOCVD). Special emphasis has been placed upon deposition parameters crucial to obtain Pr2O3 phase and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium containing films. The breakdown (BD) characteristics of Pr2O3 films have been investigated by an innovative and handling approach based on C-AFM. Moreover, the BD kinetics have been elucidated considering the role of defects in the conduction mechanisms.