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Articles by keyword: «Free Carrier Absorption»

• Absorptive Fourier Transient Grating Spectroscopy in Indirect Semiconductors and Quantum Structures
  Published in: Ultrafast Phenomena in Semiconductors (p287)
• Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection
  Published in: Silicon Carbide and Related Materials - 1999 (p555)
• Electrical Parameters of Bulk 3C-SiC Crystals Determined by Hall Effect, Magnetoresistivity, and Contactless Time-Resolved Optical Techniques
  Published in: Silicon Carbide and Related Materials 2010 (p157)
• Evaluation of Auger Recombination Rate in 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p533)
• Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence
  Published in: Silicon Carbide and Related Materials - 1999 (p671)
• Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
  Published in: Silicon Carbide and Related Materials 2009 (p231)
• Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1053)
• Nondestructive Characterisation of MOVPE-Grown CdTe and ZnTe Epilayers by Picosecond and Nanosecond 'Excite-Probe' Techniques
  Published in: Ultrafast Phenomena in Semiconductors (p111)
• Nondestructive Evaluation of Photo-Electrical Properties of 3C-SiC (111) Homoepitaxial Layers Grown by CVD
  Published in: Silicon Carbide and Related Materials 2010 (p153)
• Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals
  Published in: Silicon Carbide and Related Materials 2009 (p215)
• On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures
  Published in: HeteroSiC & WASMPE 2011 (p159)
• On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures
  Published in: Silicon Carbide and Related Materials 2009 (p219)
• R2sonant Effects in the Electron-Impurity Interaction Screening by Phonos
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p315)
• Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2007 (p489)