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Articles by keyword: «ICTS»

• Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p435)
• Conduction Properties of Intergranular Phase in SrTiO₃ -Bi₂O₃ Capacitors
  Published in: Intergranular and Interphase Boundaries in Materials (p117)
• Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p851)
• Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p617)
• Electrical Properties of Grain Boundaries in Ceramic Semiconductors
  Published in: Electrical Properties of Oxide Materials (p317)
• Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
  Published in: Silicon Carbide and Related Materials 2001 (p847)
• Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs
  Published in: Defects in Semiconductors 18 (p261)