Papers by Keyword: ICTS

Abstract: With EDI, Internet, e-commerce and other key technologies, the application process can be divided into three stages: data processing stage represented by EDI, rapid popularization stage brought by Internet and diversified stage with e-commerce. The commercial activities in China has widely used information to strengthen competition to a certain degree. Enterprises of different industries, types and scale vary greatly in application of ICTs. From the perspective of application method, the current situation of application of ICTs by commercial enterprises in China is characterized by high network application and popularization rate, emerging of e-commerce enterprises and wide application of information system software. The e-commerce development in China obviously centralizes in Beijing-Tianjin-Hebei Region, Jiangsu-Zhejiang-Shanghai Region and Pearl River Delta as well as Shandong Peninsula and Cheng-Yu area to a certain degree.

Abstract: The authors have investigated electrical behavior of implanted Al and B atoms near a “tail” region in 4H-SiC (0001) after high-temperature annealing. For aluminum-ion (Al+) implantation, slight in-diffusion of Al implants occurs in the initial stage of annealing at 1700 °C. Nearly all of implanted Al atoms, including the in-diffused Al atoms were activated by annealing at 1700 °C for 1 min. Several electrically deep centers are formed by Al+ implantation. The concentrations of the centers are 3-4 orders-of-magnitude lower than that of implanted Al-atom concentration. For boron-ion (B+) implantation, significant out- and in-diffusion of B implants occur in the initial stage of annealing at 1700 °C. Most of the in-diffused B implants work as B acceptors. A high density of B-related D center exists near the tail region. To suppress the B diffusion, a ten-times higher dose of carbon-ion (C+) co-implantation is effective. However, high concentrations of additional deep centers are introduced by such high-dose C+ co-implantation.