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Articles by keyword: «Internal Gettering»

• A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p81)
• Comparison of Nickel and Iron Gettering in Cz Silicon Wafers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p367)
• Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p111)
• Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p49)
• Influence of Oxygen on External Phosphorus Gettering in Disordered Silicon Wafers
  Published in: Defects in Semiconductors 17 (p1629)
• Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p75)
• Internal Gettering in Silicon: Experimental and Theoretical Studies Based on Fast and Slow Diffusing Metals
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p381)
• Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p63)
• The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p631)
• Tuning Oxygen Concentration at Low and High Temperature IG Process and Boron Concentration in Epitaxial Wafer for the Gettering of Metal Impurities
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p539)