Papers by Keyword: Internal Gettering

Abstract: The results of this work have shown that for microelectronic applications, gettering at dislocations is less important and oxygen precipitates are the main getter sink for Cu. Sufficient gettering of Cu in samples contaminated with low Cu concentration requires a higher density and larger oxygen precipitates compared to samples contaminated with high Cu concentration. It is demonstrated that the getter efficiency depends on the contamination level of the samples and getter test with low contamination level must be applied for microelectronic applications. Furthermore, a getter test for 3D chip stack technologies was developed. It was shown that although the wafers are thinned to a thickness of 50 μm their getter efficiency seems to be higher than for wafers of the original thickness. This is assumed to be due to the higher Cu concentration in the thinner wafers which can be gettered easier. It is also demonstrated that BMDs can getter Cu impurities even if the temperature does not exceed 300 °C. The getter efficiency tends to be higher if the samples are stored under day light and not in the dark.

Abstract: The aim of this work is to study the low temperature annealing effect on the electrical properties of p-type multicrystalline silicon grown by Heat Exchanger Method (HEM).The minority carrier lifetime variation, the transition metal elements behavior, the sheet resistivity and the interstitial oxygen concentration after different temperatures annealing under N₂ ambient were investigated using quasi-steady state photoconductance technique (QSSPC), secondary ion mass spectroscopy (SIMS), four-probe measurement and Fourier transform infrared spectrometer (FTIR), respectively. The obtained results indicate in the temperature range of 300°C to 700°C that the effective lifetime increases and reaches its maximum values of 28 μs at 500 °C and decreasing to 6 μs at 700 °C. This amelioration is due probably to metallic impurities internal gettering in the extended defects and in the oxygen precipitates as observed on SIMS profiles and the FTIR spectra. From 300 °C to 500 °C the sheet resistivity values rest unchanged at 30 Ω.cm^-2 and rises significantly to reach 45 Ω.cm^-2 for T> 500 °C.

Abstract: Two getter tests were carried out in order to study the getter efficiency of oxygen precipitates in silicon samples contaminated with low and high Cu concentration. The samples were pre-treated by RTA followed by annealing in the temperature range between 700 °C and 1000 °C for various times in order to establish different concentrations and different sizes of oxygen precipitates in the samples. From the analysis of the results of the normalized inner surface and the gettering efficiency, it was deduced that in highly contaminated samples Cu precipitates more easily at dislocations than at the surface of oxygen precipitates. Contrarily, in the samples contaminated with low Cu concentration the presence of dislocations does not improve the getter efficiency. Cu precipitates were found at the edge of a plate-like precipitate in a sample with low Cu concentration.

Abstract: The build-up of strain fields caused by the precipitation of oxygen in Czochralski-silicon during annealing up to 1200°C and for process times up to 70 hours has been observed in real time by high energy x-ray diffraction. Five different processes are distinguished in the temperature evolution of the intensity and of the rocking width of the silicon 220-reflection. These features are attributed to different precipitation mechanisms. A fit to part of the data with a diffusion limited precipitation model leads to an activation energy for oxygen diffusion in silicon of 2.2 eV in the temperature range from 700°C to 950°C.