| Paper Title | Page |
|---|---|
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4H-SiC Device Scaling Development on Repaired Micropipe Substrates Authors: T.E. Schattner, Jeff B. Casady, M.C.D. Smith, Michael S. Mazzola, Vladimir Dmitriev, S.V. Rentakova, Stephen E. Saddow |
1203 |
|
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates Authors: N.I. Kuznetsov, A. Morozov, D. Bauman, V. Ivantsov, V. Sukhoveyev, Irina P. Nikitina, A.S. Zubrilov, S.V. Rendakova, Vladimir Dmitriev, D. Hofman, György Vida |
229 |
|
4H-SiC pn Diode Grown by LPE Method for High-Power Applications Authors: N.I. Kuznetsov, D. Bauman, A. Gavrilin, Liliana Kassamakova, Roumen Kakanakov, G. Sarov, T. Cholakova, Konstantinos Zekentes, Ventzislav I. Dimitrov |
867 |
|
Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-Standing 3C-SiC Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel |
49 |
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Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals Authors: Didier Chaussende, Christophe Jacquier, Gabriel Ferro, Jean Claude Viala, François Cauwet, Yves Monteil |
85 |
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Crystal Growth and Epitaxy from Solutions III. Special Topics of Growth from Solutions Authors: H.J. Scheel |
201 |
|
Authors: Toru Ujihara, S. Munetoh, Kazuhiko Kusunoki, Kazuhito Kamei, N. Usami, K. Fujiwara, G. Sazaki, Kazuo Nakajima |
633 |
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Authors: B. Steiner, Günter Wagner, Axel Voigt, W. Dorsch, Horst P. Strunk |
143 |
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Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method Authors: N.I. Kuznetsov, D. Bauman, A. Gavrilin, Evgenia V. Kalinina |
1313 |
|
Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method Authors: Pierre Ferret, A. Leray, G. Feuillet, P. Lyan, C. Pudda, Thierry Billon |
201 |
Keyword:
"Liquid Phase Epitaxy (LPE)"
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Showing 1 to 10 of 47 Papers
