Papers by Keyword: MBE

Paper TitlePage

Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

Authors: Francisco M. Morales, A. Ponce, S.I. Molina, Daniel Araujo, R. García, J. Ristic, M.-A. Sánchez-García, Enrique Calleja, Volker Cimalla, Joerg Pezoldt

1003

Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

Authors: Francisco M. Morales, S.I. Molina, Daniel Araujo, Volker Cimalla, Joerg Pezoldt

285

High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates

Authors: Petia Weih, Volker Cimalla, Christian Förster, Joerg Pezoldt, Thomas Stauden, Lothar Spieß, Henry Romanus, M. Eickhoff, M. Hermann, Pierre M. Masri, Oliver Ambacher

233

n- and p-Type Doping of Cubic GaN

Authors: Donat J. As

Surface Morphology of GaN Epilayer with Si_xN_1-x Buffer Layer Grown by Ammonia-source MBE

Authors: Mitsuaki Shimizu, H. Ohkita, Akira Suzuki, Hajime Okumura

1465

3C-SiC Growth on 6H-SiC (0001) Substrates

Authors: Igor Matko, Bernard Chenevier, M. Audier, Roland Madar, M. Diani, L. Simon, L. Kubler, D. Aubel

315

Incorporation, Diffusion and Agglomeration of Carbon in Silicon

Authors: P. Lavéant, P. Werner, G. Gerth, U.M. Gösele

189

Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study

Authors: Andreas Fissel, W. Richter

409

Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal

Authors: D. Purser, M. Jenkins, D. Lieu, F. Vaccaro, A. Faik, M.A. Hasan, H.J. Leamy, C. Carlin, Mauro R. Sardela, Qing Xiang Zhao, Magnus Willander, M. Karlsteen

313

Characterization of AlGaN/GaN HEMT Devices Grown by MBE

Authors: T.W. MacElwee, J.A. Bardwell, H. Tang, J.B. Webb

1647