Papers by Keyword: Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure
Authors: Seiji Suzuki, Shinsuke Harada, Tsutomu Yatsuo, Ryouji Kosugi, Junji Senzaki, Kenji Fukuda
753
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
Authors: Satoshi Tanimoto, Masakatsu Hoshi, Norihiko Kiritani, Hideyo Okushi, Kazuo Arai
725
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
Authors: Norihiko Kiritani, Masakatsu Hoshi, Satoshi Tanimoto, Kazuhiro Adachi, Shin Ichi Nishizawa, Tsutomu Yatsuo, Hideyo Okushi, Kazuo Arai
669
Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (11-20) Face
Authors: Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki, Kenji Fukuda
613
High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing
Authors: Kenji Fukuda, Junji Senzaki, Kazutoshi Kojima, Takaya Suzuki
567
Super-Junction Device Forward Characteristics and Switched Power Limitations
Authors: Kazuhiro Adachi, C. Mark Johnson, Hiromichi Ohashi, Takashi Shinohe, Kozo Kinoshita, Kazuo Arai
1251
Realization of a High-Current and Low RON 600V Current-Limiting Device
Authors: F. Nallet, Philippe Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre Chante
1247
A 600 V SiC Trench JFET
Authors: R.N. Gupta, H.R. Chang, E. Hanna, C. Bui
1219
4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
Authors: Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami
1215
SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)
Authors: Osamu Kusumoto, Toshiya Yokogawa, Kenya Yamashita, Kunimasa Takahashi, Makoto Kitabatake, Masao Uchida, Ryouko Miyanaga
1211
Showing 101 to 110 of 166 Paper Titles