Papers by Keyword: Metal Impurity

Abstract: The results of this work have shown that for microelectronic applications, gettering at dislocations is less important and oxygen precipitates are the main getter sink for Cu. Sufficient gettering of Cu in samples contaminated with low Cu concentration requires a higher density and larger oxygen precipitates compared to samples contaminated with high Cu concentration. It is demonstrated that the getter efficiency depends on the contamination level of the samples and getter test with low contamination level must be applied for microelectronic applications. Furthermore, a getter test for 3D chip stack technologies was developed. It was shown that although the wafers are thinned to a thickness of 50 μm their getter efficiency seems to be higher than for wafers of the original thickness. This is assumed to be due to the higher Cu concentration in the thinner wafers which can be gettered easier. It is also demonstrated that BMDs can getter Cu impurities even if the temperature does not exceed 300 °C. The getter efficiency tends to be higher if the samples are stored under day light and not in the dark.

Abstract: Ge (100) thin film on Si (100) substrate is one of the new material technologies in the post scaling. In this study, we analyzed the stability of metal impurities of 4th row element around the interface of Ge (100) / Si (100) structure by using first-principles calculation. Considering the actual structure of the Ge thin film on Si (100) substrate, six calculation models were prepared. The calculated results showed that (1) Sc and Zn atoms are most stable at Ge surface, (2) Ti - Cr atoms are most stable in tensile plane-strained Si layer, (3) Mn - Cu atoms are most stable in compressive plane-strained Ge layer. These results indicate that the metal impurities concentrate on the strained region around the interface and/or Ge surface.

Abstract: We report on a light-beam-induced current (LBIC)-analysis of metal silicide defects arising from co-precipitation of copper and nickel in Cz-silicon-bicrystals produced by wafer direct bonding. Large colonies of silicide precipitates in the one wafer emerging from undisturbed growth from few nucleation sites were observed in different orientations with respect to the surface which correspond to Si {110} planes. From this, the colonies formed during copper-nickel co-precipitation reveal the same attributes as those colonies typical for copper precipitation in the absence of nickel. Oxygen related defects associated with a higher defect distribution in the other wafer were characterized by means of high resolution Transmission Electron Microscopy (TEM) and their temperature dependent LBIC signal.

Abstract: The alkali halide Na1-xAgxCl, with two different compositions (x = 0.03 and 0.10), was studied with regard to the Ag impurities in terms of the bonding and electron density distribution. X-ray single crystal data sets have been used for the purpose. The present analysis focused on the electron density distribution and hence the interaction between the atoms is clearly revealed by maximum entropy method (MEM) and multipole analyses. The bonding in these systems has been studied using two-dimensional MEM electron density maps on the (100) and (110) planes and onedimensional electron density profiles along the [100], [110] and [111] directions. The mid-bond electron densities between atoms in these systems are found to be 0.175 e/Å3 and 0.183 e/Å3, respectively, for Na0.97Ag0.03Cl and Na0.90Ag0.10Cl. Multipole analysis of the structure has been performed for these two systems, with respect to the expansion/contraction of the ion involved.