Papers by Keyword: SIMOX

Abstract: There is growing demand to perform dynamic, atomistic computer-simulation of nano-scaled interfaces. For dynamic simulation of interesting processes at the nano-interfaces, we have been developing the hybrid simulation schemes by concurrently coupling the quantum description as the electronic density-functional theory and the classical description as the classical molecular dynamics. A quantum (QM) region composed of a relatively small number of atoms, is embedded with the novel buffered-cluster method in a classical (CL) region of atoms interacting through an empirical inter-atomic potential. The hybrid QM-CL simulation scheme is applied to various kinds of nano-processes including implantation of oxygen atoms to a Si slab relating to SIMOX technology.

Abstract: Four types of SGOI (SiGe on Insulator) wafers were fabricated by the combination of SiGe epitaxial growth, SIMOX (Separation by Implanted Oxygen) processes and oxidation. By the cross-sectional TEM (Transmission Electron Microscopy) and EDS (Energy Dispersive Spectroscopy), it is confirmed that each wafer has smooth interface between a top layer (Si or SiGe) and a BOX (buried oxide) layer and Ge atoms in SiGe layer distribute homogeneously for SGOI_A and SGOI_B. Using high-resolution X-ray diffractometry, the crystallographic properties of SiGe layer are characterized with in-plane and out of plane diffraction methods. The lattice constants are calculated for the planes of perpendicular and parallel to wafer surface and the degree of relaxation are estimated for the SiGe layer of each wafer. The rocking curve measurements reveal that the lattice turbulence of SiGe layer is influenced by SIMOX process conditions, Ge content and the layer thickness.