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Articles by keyword: «Self-Interstitial»

• A Possible Mechanism of Disordering of Ordered Alloys by Irradiation and Ball Milling
  Published in: Mechanically Alloyed and Nanocrystalline Materials (p73)
• Ab Initio Studies of Local Vibrations of Small Self-Interstitials Aggregates in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p175)
• Annihilation of Self-Interstitials by Dislocations in Silicon as Studied by Gold Diffusion
  Published in: Polycrystalline Semiconductors IV (p3)
• Atomic Transport in Semiconductions: Diffusion Mechanisms and Chemical Trends
  Published in: Diffusion in Materials - DIMAT 1992 (p895)
• Basic Condition for the Pair Diffusion Model of Group V Impurities in Silicon
  Published in: Diffusion in Materials - DIMAT 1992 (p955)
• Behavior of Self-Interstitials and Vacancies in Silicon
  Published in: Diffusion in Materials - DIMAT 1992 (p961)
• Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects
  Published in: Diffusion in Silicon (p11)
• Damage Evolution in Al-implanted 4H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p869)
• Defect Injection and Diffusion in Semiconductors
  Published in: Reactive Phase Formation at Interfaces and Diffusion Processes (p475)
• Diffusion and Solubility of Iridium in Silicon
  Published in: Diffusion in Materials DIMAT2000 (p635)
• Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p25)
• Direct Observation of Self-Interstitial Motion in Pure Iron by ⁵⁶Fe(d,p)⁵⁷Fe In-Beam Mössbauer Spectroscopy
  Published in: Diffusion in Materials DIMAT2000 (p29)
• Dopant Diffusion and Defect Formation in III-V Semiconductors: Zinc Diffusion in GaAs
  Published in: Diffusion in Materials DIMAT 1996 (p1095)
• Elastic Instability of Strained Spherical Precipitates as a Cause of Oxide Platelets in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p121)
• Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p273)