Papers by Keyword: Semi-insulating (SI)

Abstract: The effects of H2 addition to the growth ambient during physical vapor transport (PVT) growth of 6H and 4H SiC were investigated using SIMS, DLTS and Hall effect measurements. Using this hybrid physical-chemical vapor transport (HPVT) approach, boules were grown using Ar-H2 and He-H2 mixtures with H2 concentrations up to 50 at%. Thermodynamic modeling suggests that addition of H2 improves the carbon transport in HPVT compared to standard PVT. This should lead to a substantial decrease in the concentration of residual N donors and the concentration of electron traps. This is confirmed by the experimental results. As expected, the source transport rate increased as H2 was added to the growth environment due to increased C transport. The background nitrogen concentration and the free electron density decreased significantly with increasing H2 concentration. The formation of electron traps (activation energies of 0.4 eV, 0.6-0.65 eV, 0.7 eV, 0.9 eV and 1 eV) was also strongly suppressed. These changes were observed for H2 concentrations as low as 4 at%. The decreased N concentration improves the ability to produce high resistivity SiC material, and for H2 concentrations as high as 10-25%, the very first wafers cut from the seed end of the boules have a resistivity exceeding 106
cm.

Abstract: Over the past year, II-VI has transitioned from 2” to 3” commercial SiC substrates. Large-diameter semi-insulating 6H-SiC and n-type 4H-SiC single crystals are grown using the Advanced PVT growth process. Expansion of boule diameter from 2 to 3 and up to 4.25 inches has been carried out using a specially designed growth technique. Stable semi-insulating properties in 6H-SiC are achieved by precise vanadium compensation. The technique of compensation is optimized to produce a controlled and spatially uniform distribution of vanadium and high and spatially uniform electrical resistivity reaching 10 10 – 1011
·cm. N-type 3-inch 4H-SiC crystals are grown using doping with nitrogen, and 3-inch 4H-SiC substrates show uniform resistivity of about 0.018
·cm. The best quality semiinsulating (SI) 3” 6H-SiC substrates demonstrate micropipe density of 3 cm-2, and n-type 3” 4H-SiC substrates - about 1 cm-2. X-ray rocking curve topography of the produced 3” SiC substrates is used for evaluation of their crystal quality.

Abstract: II-VI has developed an Advanced PVT (APVT) process for the growth of nominally undoped (vanadium-free) semi-insulating 2” and 3” diameter 6H-SiC crystals with room temperature resistivity up to 1010 W·cm. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of the impurity background. The APVT-grown material demonstrates concentrations of B and N reduced to about 2·1015cm-3. Wafer resistivity has been studied and correlated with Schottky barrier capacitance, yielding the density of deep compensating centers in 6H-SiC in the low 1015 cm-3 range for both ntype and p-type material. The nearly equal density of deep donors and deep acceptors ndicates that the centers responsible for the intrinsic compensation can be amphoteric. TheEPR density of spins from free carbon vacancies is about 1014 cm-3. It is also hypothesized that impurity-vacancy complexes can be present in the undoped material and participate in compensation.

Abstract: Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.