Papers by Keyword: Silicon Carbide (SiC)

Paper TitlePage

Comparison of Different Surface Pre-Treatments to n-Type 4H-SiC and their Effect on the Specific Contact Resistance of Ni Ohmic Contacts
Authors: G. Pope, Owen James Guy, Philip Andrew Mawby
833
Characterization of 3C-SiC Monocrystals Using Positron Annihilation Spectroscopy
Authors: X. Kerbiriou, A. Greddé, Marie France Barthe, P. Desgardin, G. Blondiaux
825
Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
Authors: V.D. Heydemann, W.J. Everson, Rick D. Gamble, David Snyder, Marek Skowronski
805
Electro-Chemical Mechanical Polishing of Silicon Carbide
Authors: Can Hua Li, Rong Jun Wang, Joseph Seiler, I. Bhat
801
Static and Dynamic Characterization of 20A, 600V SiC MOS-Enhanced JFET
Authors: E. Hanna, H.R. Chang, A.V. Radun, Q. Zhang, M. Gomez
1389
Measurement of Low Level Nitrogen in Silicon Carbide Using SIMS
Authors: Larry Wang
771
Sc Impurity in Silicon Carbide
Authors: E.I. Yuryeva, V.I. Zubkov, V.S. Ballandovich, I.I. Parfenova
767
Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
Authors: M. Zhang, H. McD. Hobgood, Michael Treu, P. Pirouz
759
Non-Contact Doping Profiling in Epitaxial SiC
Authors: A. Savtchouk, E. Oborina, A.M. Hoff, J. Lagowski
755
Growth of Phosphorous-Doped n-Type 6H-SiC Crystals using a Modified PVT Technique and Phosphine as Source
Authors: Patrick Desperrier, Ralf Müller, Albrecht Winnacker, Peter J. Wellmann
727
Showing 1261 to 1270 of 1763 Paper Titles