Papers by Keyword: Silicon Wafer

Abstract: In order to make the material removal distribution on polishing silicon surface more non-uniform during the chemical mechanical polishing (CMP), a kind of the bionic polishing pad with phyllotactic pattern has been designed based on phyllotaxis theory, and by polishing experiment, the effects of the phyllotaxis parameters on material removal distributions on silicon wafer surfaces are investigated. The research results show that the material removal distribution of polishing silicon surface more uniform and the edge rounding of polishing wafer can be decreased when the phyllotaxis parameters of the polishing pad are reasonably selected.

Abstract: This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-III and Si-XII phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-I phase and the applied load was analysied.

Abstract: In order to make the contact pressure distribution of polishing wafer surface more uniform during chemical mechanical polishing (CMP), a kind of the bionic polishing pad with sunflower seed pattern has been designed based on phyllotaxis theory, and the contact model and boundary condition of CMP have been established. Using finite element analysis, the contact pressure distributions between the polishing pad and wafer have been obtained when polishing silicon wafer and the effects of the phyllotactic parameter of polishing pad on the contact pressure distribution are found. The results show that the uniformity of the contact pressure distribution can be improved and the singularity of the contact pressure in the boundary edge of polished wafer can be decreased when the reasonable phyllotactic parameters are selected.

Abstract: Recently in semiconductor industry, production of ever flatter, thinner and larger silicon wafers are required to fulfill the demands of high-density packaging and cost reduction. In geometric evaluation of Si wafers, according to SEMI (Semiconductor Equipment and Materials International) standards, the required wafer flatness approaches to the 22 nanometers by year 2016 [1]. For such application, uncertainty of measured data is encountered as a severe problem because high resolution instrument always incorporate a certain degree of noise. In order to precisely evaluate the wafer profile, it is essential to remove the noise from the measured data. Described in this paper is design and development of digital filters for denoising. Compared to the conventional low-pass filters, the developed filter by use of wavelet transform not only provides better performance of decomposition in the spatial frequency domain, but also offers the new capability of denoising in amplitude domain.

Abstract: Chemo-mechanical grinding (CMG) process is a promising process for large-sized Si substrate fabrication at low cost. However, effect of additive in CMG wheel is not completely understood yet. In this paper, three different CMG wheels were developed, in which one excluded additive and the other two contained two kinds of additive i.e. silicon dioxide and sodium carbonate. Grinding experiments were conducted to explore the influence of exclusion of additive and inclusion of different kinds of additive on CMG performance. The grinding characteristics of the three wheels were also analyzed and discussed to reveal the roles of wheel compositions in CMG process. This work provides some fundamental insights for the selection of different types of additive for optimization of CMG wheel.

Abstract: In recent years, the achievement of further high flatness of workpiece edge shape is strongly required in mirror finishing. Especially, the edge roll off of silicon wafers as the substrates of semiconductor devices is demanded to decrease in the polishing process for raising the yield of IC chips. Many theoretical and experimental analyses for the edge roll off generation have been already done to meet the demand. The analyses, however, cannot fully account for the obtained edge shape in actual polishing. Concretely, the influence of the polishing pressure as one of the key polishing conditions on the edge roll off has not been clarified. In this study, the influence of the polishing pressure on the edge shape was investigated by the polishing experiments and the edge roll off generation analyses using the model based on the viscoelasticity of the polishing pad, which was proposed in the previous study. And it was revealed that an appropriate polishing pressure is needed to be set for achieving high flatness of workpiece edge shape with the consideration of the properties of applied polishing pads.

Abstract: We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.

Abstract: The MEMS technology for various nano/micro devices often requires special facilities and complicated and multistage processes, thus the fabrication cost is extremely high. This research aimed to fabricate nanoscale basic structures on silicon substrates using nanoscratching, which can be potentially used to make nano/micro molds for nanoimprint lithography. In this study, various nano/micro-scale structures, such as groove and, single and multiple layer structures were generated on the silicon substrate using an atomic force microscope equipped with a sharp probe made of monocrystalline diamond. The nanoimprint experiment was also performed using the fabricated single-step mold and silicon-resin to fabricate single island structures.

Abstract: Recently in semiconductor industry, production of ever flatter, thinner and larger silicon wafers are required to fulfill the demands of high-density packaging and cost reduction. In geometric evaluation of Si wafers, according to SEMI (Semiconductor Equipment and Materials International) standards, the required wafer flatness approaches to the 22 nanometers by year 2016 [1]. For such application, uncertainty of measured data is encountered as a severe problem because the requirement has met the limit of available instrument in terms of resolution and reliability. In order to precisely evaluate the wafer profile, it is essential to remove the noise from the measured data. Described in this paper is design and development of digital filters for denoising. In previous paper, digital filters for denoising with Haar wavelet transform are described. In this paper, the new filters by use of 2nd generation wavelet transform (lifting scheme) are proposed and show better performance of decomposition in the spatial frequency domain and amplitude domain.

Abstract: A Novel Piezoelectric Grinding Dynamometer for Monitoring Ultra-precision Grinding of Silicon Wafers