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Articles by keyword: «Vapor-Phase Epitaxy (VPE)»

• Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p231)
• Growth of III-V Nitride Films for Optoelectronic Devices
  Published in: Disordered Materials (p237)
• Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p89)
• Growth of δ-Doped SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2000 (p563)
• Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p115)
• Open Tube Iso-VPE of Hg_1-xCd_xTe on CdTe/Sapphire Hybrid Substrates
  Published in: Advances in Crystal Growth (p123)
• Principles of VPE and MOVPE and Applications
  Published in: Theoretical and Technological Aspects of Crystal Growth (p153)
• SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p83)