Papers by Keyword: Vapor-Phase Epitaxy (VPE)

Paper TitlePage

Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
Authors: Seoyong Ha, P. Mieszkowski, L.B. Rowland, Marek Skowronski
231
Growth of δ-Doped SiC Epitaxial Layers
Authors: S. Karlsson, C. Adås, Andrey O. Konstantinov, Margareta K. Linnarsson
563
Principles of VPE and MOVPE and Applications
Authors: N. Lovergine
153
Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
Authors: L.B. Rowland, Albert A. Burk, C.D. Brandt
115
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
Authors: Roland Rupp, A. Wiedenhofer, Peter Friedrichs, Dethard Peters, Reinhold Schörner, Dietrich Stephani
89
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
Authors: Albert A. Burk, Michael J. O'Loughlin, S.S. Mani
83
Growth of III-V Nitride Films for Optoelectronic Devices
Authors: D.C. Knick, M.S. Tomar, K.A. Kuenhold
237
Open Tube Iso-VPE of Hg1-xCdxTe on CdTe/Sapphire Hybrid Substrates
Authors: F. Campanella, S. Bernardi
123
Showing 1 to 8 of 8 Paper Titles