Home(11-20) Plane

Papers by Keyword: (11-20) Plane

Paper TitlePage

Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC

Authors: Masataka Satoh

773

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Authors: Shun-ichi Nakamura, Hironori Kumagai, Tsunenobu Kimoto, Hiroyuki Matsunami

651

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

Authors: Kazutoshi Kojima, Takaya Ohno, Junji Senzaki, Kenji Fukuda, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

195

Recent Achievements and Future Challenges in SiC Homoepitaxial Growth

Authors: Tsunenobu Kimoto, S. Nakazawa, Keiko Fujihira, T. Hirao, Shun-ichi Nakamura, Yi Chen, K. Hashimoto, Hiroyuki Matsunami

165

Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates

Authors: Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino

119

The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates

Authors: Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino

115