Forthcoming Books

All Forthcoming Books
The 4th SLIIT International Conference on Engineering and Technology (SICET)
Editors:
Prof. Dushantha Nalin K. Jayakody, Prof. Prasanna Gunawardena, Prof. Manjula Fernando and Dr. Lakmini Malasinghe
Coming in:
May 2026
Description:
This proceedings volume presents peer-reviewed papers selected from the 4th SLIIT International Conference on Engineering and Technology 2025 (SICET 2025). The contributions cover applied research and practical innovations across engineering and technology, including sustainable construction materials, industrial automation and mechatronics, communication, water and wastewater treatment, and some approaches of industrial management. The volume offers a multidisciplinary snapshot of current research trends and implementable solutions with relevance to researchers, practitioners, and industry stakeholders.
Material Characterisation and Devices Processing
Editors:
Sang Mo Koo and Hoon Kyu Shin
Coming in:
May 2026
Description:
This special edition brings together fundamental and applied aspects of semiconductor materials science with advanced device fabrication and characteristics evaluation techniques. By harmoniously integrating recent advances from materials science, semiconductor physics, and electronic engineering, this book is intended to serve as a valuable resource for researchers, engineers, and graduate students working in wide-bandgap semiconductors and power device technology.
Design of SiC Power Devices
Editors:
Sang Mo Koo and Hoon Kyu Shin
Coming in:
May 2026
Description:
The presented special edition considers the principles, methodologies, and innovative approaches that underpin the practice of developing advanced SiC-based power semiconductor structures. This edition explores concepts for a broad range of devices based on SiC MOSFETs, and it's intended for researchers, engineers, and graduate students in power electronics development and design.

Latest publications

Robustness and Reliability of SiC MOSFET Devices, SiC MOSFET Power Modules
Editors:
Sang Mo Koo and Hoon Kyu Shin
Online since:
May 2026
Description:
This special edition is devoted to the research on the durability and long-term performance of SiC-based power components and modules under various operating conditions and is intended for researchers, engineers and graduate students engaged in the development of advanced wide-bandgap power electronics.
Defects Evaluation
Editors:
Sang Mo Koo and Hoon Kyu Shin
Online since:
May 2026
Description:
This special edition is devoted to the identification, characterisation, and understanding of the effects of structural critical imperfections of silicon carbide during bulk crystal growth and epitaxial deposition. Emphasis is placed on advanced analytical techniques that provide essential insight into the origin, distribution, and evolution of defects, enabling continuous improvement in crystal growth processes and epitaxial technologies. The publication aims to provide researchers and engineers with a deeper understanding of defect formation and characterisation, which is fundamental to achieving the material perfection required for the creation of reliable and efficient SiC-based electronic devices.
Stacking Faults
Editors:
Sang Mo Koo and Hoon Kyu Shin
Online since:
May 2026
Description:
The special edition focuses on the investigation of the various stacking faults found in SiC polytypes, analysing their crystallographic nature, formation mechanisms, characterisation methods, and their influence on device properties. By deepening understanding of the conditions that promote the development of these defects, researchers and engineers can improve the quality of SiC substrates and epitaxial layers, supporting the continued advancement and modernisation of related technologies. The presented edition will be helpful for a wide range of specialists in the semiconductor industry.
Bulk and Epitaxial Growth of SiC
Editors:
Sang Mo Koo and Hoon Kyu Shin
Online since:
May 2026
Description:
This special edition addresses the scientific and technological foundations underlying the production of silicon carbide crystals and device-quality epitaxial films. Bulk crystal growth techniques, particularly physical vapour transport, are discussed with emphasis on technological control, defect reduction, polytype stability, and process optimisation, all of which affect final device performance and reliability. The edition will serve as a valuable resource for researchers, engineers, and students working in semiconductor materials and technologies.
The 3rd International Conference on the Future Sustainable Energy (ICFSE)
Editors:
Hasan Sh. Majdi, Azher Muhson Abed, Dr. Ammar Abdulkadhim Fathi, Dr. Salwan Obaid Waheed Khafaji and Dr. Tayser Sumer Gaaz
Online since:
May 2026
Description:
The edition contains articles based on research results presented at the 3rd International Conference on the Future Sustainable Energy (ICFSE , 19-20 October 2025, Babylon, Iraq). The collection will be helpful for a wide range of engineers and researchers from industry and construction.