The Optimal Design of Trench Field Rings for High Breakdown Voltage

Ey Goo Kang; Sung Young Hong; Byoung Sub Ahn

doi:10.4028/www.scientific.net/AEF.2-3.1047

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HomeAdvanced Engineering ForumAdvanced Engineering Forum Vols. 2-3The Optimal Design of Trench Field Rings for High...

The Optimal Design of Trench Field Rings for High Breakdown Voltage

Abstract:

The trench field ring for breakdown voltage of power devices is proposed. The new ring can improve 10% efficiency comparing with conventional field ring. Five parameters of trench field ring for design of trench field ring are analyzed and 2-D devices simulation and process simulations are carried out. The number of field ring, juction depth, distance of field rings, trench width, doping profiled are discussed. The proposed trench field ring was better for higher voltage more than 1000V.

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Periodical:

Advanced Engineering Forum (Volumes 2-3)

Pages:

1047-1050

DOI:

https://doi.org/10.4028/www.scientific.net/AEF.2-3.1047

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Online since:

December 2011

Authors:

Ey Goo Kang, Sung Young Hong, Byoung Sub Ahn

Keywords:

Breakdown Voltage, Field Plate, Power Device, Trench Depth, Trench Field Ring

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Creative Commons CC BY 4.0

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References

[1] E. G. Kang, M. Y. Sung, A novel lateral trench electrode IGBT for super electrical characteristics, J. KIEEME No. 15. Vol. 9, p.758, (2002).

Google Scholar

[2] K . Sheng, S.J. Finney, B.W. Williams, Improved understand- switched thyristors, in: Proceedings of the ISPSD, p.48, (1994).

Google Scholar

[3] S. Sridhar, B. J. Baliga, The dual gate emitter switched thyristor, IEEE EDL, No. 17, p.25, (1996).

DOI: 10.1109/55.475566

Google Scholar

[4] N. Iwamuro, A. Okamoto, Forward biased safe operating area of emitter switched thyristor, IEEE Trans. ED, Vol. 42, p.334, (1995).

DOI: 10.1109/16.370060

Google Scholar

[5] N. Thapar, B. J. Baligar, An experimental evluation of the on-state performance of trench IGBT designs, SSE, Vol. 45, No. 5, p.771, (1998).

Google Scholar

[6] F. Udera, S.S.M. Chan, 1. 2kV trench insulated gate bipolar transistors with ultra low on resistance, IEEE Trans. EDL, Vol. 20, No. 8, p.428, (1999).

Google Scholar