Combinatorial Synthesis and Evaluation of Vanadium Oxide Films

Abstract:

Combinatorial technology is a powerful tool for new material exploration. La_1-xCa_xVO₃ composition-spread films were fabricated by combinatorial pulsed laser deposition and their thermoelectric properties were evaluated paralelly by the multi-channel thermoelectric measurement system. Concurrent X-ray analysis verified the formation of solid soluted films in the full composition range (0≤x≤1) as judged from the linear variation of the lattice constants. Growth conditions of LaVO₃ films were optimized. Good crystallinity of LaVO₃ film was obtained at 800°C, and the power factor of 0.6 µW/cm K² was achieved. The effects of oxygen content and the substitutions of Ca and Ce ions on TE properties of were also analysed respectively. Large TE properties in vanadium oxide system can be expected with the change of vanadium ion valence from 3+ to 2+. In La1-xCexVO3(0≤x≤1) system, Ce ion takes 3+ although Ce⁴⁺ is stable in theory.

• Periodical: Advanced Engineering Forum (Volumes 2-3)
• Pages: 1071-1076
• DOI: https://doi.org/10.4028/www.scientific.net/AEF.2-3.1071
• Online since: December 2011
• Authors: Qun Jiao Wang
• Keywords: Combinatorial Pulsed Laser Deposition, Film, Thermoelectricity, Vanadium Oxide

References

[1] M.J. Plunkett, J.A. Ellman, Sci. Am. 276 (1997) 68.

[2] H. Koinuma, H.N. Aiyer, Y. Matsumoto, Sci. Tech. Advan. Mater. 1(2000) 1–10.

[3] X.D. Xiang, X.Sun, G. Briceno, Y. Lou, K. Wang, H. Chang, W.G. Wallac-Freedman, S. Chen, P.G. Schultz, Science 268 (1995) 1738.

[4] K.Fujimoto, K.Onoda, M.Sato, H.Matsuo , Mater. Sci. Eng. A 475(2008)52

[5] R.Lobel, S.Thienhaus, A.Savan, A.Ludwig, Mater. Sci. Eng. A 481-482(2008)151

[6] U.S. Joshi, K.Itaka, Y.Matsumoto, H.Koinuma, Joural of.Magnetism and Magnetic Marerials, 321(2009)3595

[7] C.B. Satterthwaite Jr., R.W. Ure, Phys. Rev. 108 (1957) 1164–1170.

[8] D.M. Rowe, V.S. Shukla, J. Appl. Phys. 52 (1981) 7421–7426.

[9] J.P. Dismukes, L. Ekstrom, E.F. Steigmeier, I. Kuman, D.S. Beers,J. Appl. Phys. 35 (1964) 2899.

[10] I. Terasaki, Y. sasago, K. Uchionkura, Phys. Rev. B 56 (1997) R12685–R12687.

[11] Y. Ando, N. Miyamoto, K. Segawa, T. Kawata, I. Terasaki, Phys. Rev.B 60 (1999) 10580–10583.

[12] Xuebin Zhu, Yuping Sun, Hechang Lei, J.Appl.Phys.102(2007)103519

[13] T.Sun, J.Ma, Q.Y. Yan, Journal of CrystalGrowth 311(2009)4123

[14] H.Ohta, K.Sugiura, K. Koumoto, Inorg. Chem,47(2008)8429

[15] S.Wang, M.Chen, L.He , J.Phys.D: Appl.Phys.42(2009)045410

[16] W. Koshibae, K. Tsutsui, S. Maekawa, Phys. Rev. B 62 (2000) 6869.

[17] V.G. Zubkov, et al., Sov. Phys. Solid State 15 (1973) 1079.

[18] A.V. Mahajan, D.C. Johnston, D.R. Torgeson, F. Borsa, Phys. Rev. B 46 (1992) 10966–10972.

[19] F. Inaba, T. Arima, T. Ishikawa, T. Katsufuji, Y. Tokura, Phys. Rev. B 52 (1995) R2221–R2224.

[20] P. Bordet, C. Chaillout, M. Marezio, Q. Huang, A. Santoro, S-W.Cheong, HTakagi, C.S. Oglesby, B. Batlogg, J. Solid, State Chem.106 (1993) 253–270.

DOI: 10.1006/jssc.1993.1285

[21] M. Kestigian, J.G. Dickinson, R. Ward, J. Am. Chem. Soc. 79 (1957) 5598.

[22] T. Fukumura, M. Ohtani, M. Kawasaki, Y. Okimoto, T. Kageyama, T.Koida, T. Hasegawa, Y. Tokura, H. Koinuma, Appl. Phys. Lett. 77 (2000) 3426–3428.

DOI: 10.1063/1.1326847

[23] K. Omote, T. Kikuchi, J. Harada, M. Kawasaki, A. Ohtomo, M.Ohtani, T. Ohnishi, D. Komiyama, H. Koinuma, Proc. SPIE 3941(2000) 84–91.

DOI: 10.1117/12.385416

[24] K. Itaka, H. Minami, H. Kawaji, Q. Wang, J. Nishii, M. Kawasaki, H.Koinuma, J. Therm. Anal. Cal. 69 (2002) 1051–1058.

DOI: 10.1023/a:1020657401053

[25] M. Imada, A. Fujimori, Y. Tokura, Rev. Mod. Phys. 70 (1998)1039–1263.

[26] H.C. Nguyen, J.B. Goodenough, Phys. Rev. B 52 (1995)8776–8787.