Band Gap Optimization by Ga and S Additions in CuInSe₂ for Solar Cell Absorber Applications

Abstract:

Gallium or sulphur additions in CuInSe₂ were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films show a chalcopyrite structure with the S addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The films energy band gap could be shifted from 1.04 to 1.68eV by adjusting the mole ratio of S/(S+Se) and In/(In+Ga). It is possible to obtain the optimum energy band gap by adding S solute or Ga at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In to provide better properties of CIS films.

• Periodical: Applied Mechanics and Materials (Volumes 110-116)
• Pages: 1176-1180
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.110-116.1176
• Online since: October 2011
• Authors: Badrul Munir, Kim Kyoo Ho
• Keywords: Bandgap, CuInSe₂, PLD, Solar Cell, Sputtering, Thin Film

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