Effects of Annealing Temperature on Properties of CuIn (Se,S)2 Film Prepared by Sputtering

Abstract:

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This paper examines CuIn(Se,S)2 (CISS) films prepared by sputtering precursor films of In, Cu, and In2S3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.

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Periodical:

Edited by:

Huixuan Zhang, Ye Han, Fuxiao Chen and Jiuba Wen

Pages:

1284-1288

DOI:

10.4028/www.scientific.net/AMM.117-119.1284

Citation:

Y. C. Lin et al., "Effects of Annealing Temperature on Properties of CuIn (Se,S)2 Film Prepared by Sputtering", Applied Mechanics and Materials, Vols. 117-119, pp. 1284-1288, 2012

Online since:

October 2011

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$35.00

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