Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices

Qi Wang; Kai Liang Zhang; Fang Wang; Kai Song; Zhi Xiang Hu

doi:10.4028/www.scientific.net/AMM.130-134.1

Paper Titles

Preface and Organizing Committees

Investigation on the Electric-Field-Induced Metal-Insulator Transition in Vo_X-Based Devices
p.1

Application of PLC in Material Automatic Sorting System
p.5

Research on Elasticity Characteristic of Equivalent Bio-Material
p.10

Experimental Study on Continuous Preparation of Ultrafine Silicon Nitride Powders in Transport Bed
p.14

Influence on Electric Field Distribution of GIS Basin Insulator for Insulated Material Epoxy Resin with Different Mean Molecular Weights
p.19

Luminescent Property of Al₂O₃:Ce³⁺ Thin Films
p.23

The High Frequency Pulse Effect and Verification in the Welding Process for High-Strength Aluminum Alloy
p.27

The Combined Effects of the Environment and Sliding on the Pd-Ni Plated Connector Materials
p.32

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 130-134Investigation on the Electric-Field-Induced...

Investigation on the Electric-Field-Induced Metal-Insulator Transition in Vo_X-Based Devices

Abstract:

A sandwich device structure of MIM (metal/insulator/metal) is designed and its metal-insulator transition induced by an external electric field is investigated. VO_x films were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VO_x/Cu/Ti/SiO₂/Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with-0.4V/0.3V operation voltage (SET/RESET), while the devices of Pt/VO_x/V/Cu/Ti/SiO₂/Si, Pt/VO_x/Al/Ti/SiO₂/Si and Pt/VO_x/Pt/Ti/SiO₂/Si didn’t show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VO_x/Cu/Ti/SiO₂/Si device.

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Applied Mechanics and Materials (Volumes 130-134)

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1-4

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.130-134.1

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Online since:

October 2011

Authors:

Qi Wang, Kai Liang Zhang, Fang Wang, Kai Song, Zhi Xiang Hu

Keywords:

Different Substrates, Electric-Field-Induced Metal-Insulator Transition, Mechanism, Resistive Random Access Memory (RRAM), Schottky Emission Model, Vo_x Films

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