Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices

Abstract:

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A sandwich device structure of MIM (metal/insulator/metal) is designed and its metal-insulator transition induced by an external electric field is investigated. VOx films were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VOx/Cu/Ti/SiO2/Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with-0.4V/0.3V operation voltage (SET/RESET), while the devices of Pt/VOx/V/Cu/Ti/SiO2/Si, Pt/VOx/Al/Ti/SiO2/Si and Pt/VOx/Pt/Ti/SiO2/Si didn’t show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VOx/Cu/Ti/SiO2/Si device.

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Periodical:

Edited by:

Han Zhao

Pages:

1-4

DOI:

10.4028/www.scientific.net/AMM.130-134.1

Citation:

Q. Wang et al., "Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices", Applied Mechanics and Materials, Vols. 130-134, pp. 1-4, 2012

Online since:

October 2011

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$35.00

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