Research on the Properties of NiZnO Thin Films

Article Preview

Abstract:

NiZnO thin films had been fabricated on c-plane sapphire substrates using photo-assisted metal organic chemical vapour deposition system. The crystal quality of the films had been improved greatly comparing to the results in earlier reports. The crystal structure analysis indicated the NiZnO kept the basic wurtzite structure until the content of Ni attained 0.18. The crystal and electrical properties of the films showed the content of Ni had an important effect on the properties of NiZnO films.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

1491-1494

Citation:

Online since:

October 2011

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2012 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] Y.R. Ryu, T.S. Lee, H.W. White: Appl. Phys. Lett. Vol. 83 (2003), p.87.

Google Scholar

[2] Y.R. Ryu, J. A. Lubguban, et al.: Appl. Phys. Lett. Vol. 90 (2007), p.131115.

Google Scholar

[3] C.G. Van de Walle: Phys. Rev. Lett. Vol. 85 (2000), p.1012.

Google Scholar

[4] S. B Zhang, S.H. We, A. Zunger, Phys. Rev. B Vol. 63 (2001), p.075205.

Google Scholar

[5] U. Ozgur, Ya.I. Alivov: J. Appl. Phys. Vol. 98 (2005), p.041301.

Google Scholar

[6] H. Sato, T. Minami, S. Takata, T. Yamada: Thin Solid Films Vol. 23 (1993), p.27.

Google Scholar

[7] H. Ohta, M. Hirano, K. Nakahara: Appl. Phys. Lett. Vol. 83 (2003), p.1029.

Google Scholar

[8] Zhengjun Zhang, Ye Zhao, Minmin Zhu: Appl. Phys. Lett. Vol. 88 (2006), p.033101.

Google Scholar

[9] Y.H. Park, Y.H. Shin, S.J. Noh,: Appl. Phys. Lett. Vol. 91 (2007), p.012102.

Google Scholar

[10] K. Wang, Y. Vygranenko, A. Nathan: Thin Solid Films Vol. 516 (2008), p.1640.

Google Scholar

[11] Q. Zhong, P.C. Chou, Q.L. Li, A. Ignatiev: Physica C Vol. 246 (1995), p.288.

Google Scholar

[12] Xiangping Li, Baolin Zhang: Appl. Surf. Sci. Vol. 254 (2008), p. (2081).

Google Scholar

[13] F.K. Shan, B.I. Kim, G.X. Liu: J. Appl. Phys. Vol. 95 (2004), p.4772.

Google Scholar

[14] Tao XiangMing, Xu XiaoJun: ACTA PHYSICS SINICA, Vol. 51 (2002), p.2602.

Google Scholar

[15] Alberto M. Becerra, A.E. Castro-Luna: J. Chil. Chem. Soc. Vol. 50 (2005), p.465.

Google Scholar

[16] S. Singh, N. Rama, M.S. Ramachandra: Appl. Phys. Lett. Vol. 88 (2006), p.222111.

Google Scholar

[17] K. Ando, H. Saito, Zhengwu Jin: Appl. Phys. Lett. Vol. 78 (2001), p.2700.

Google Scholar