Analysis and Design of IGBT Driving and Protection Circuit for Photovoltaic Grid-Connected Inverter

Shu Qiu Gong; Ming Tang; Li Yan Cui

doi:10.4028/www.scientific.net/AMM.130-134.4118

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 130-134Analysis and Design of IGBT Driving and Protection...

Analysis and Design of IGBT Driving and Protection Circuit for Photovoltaic Grid-Connected Inverter

Abstract:

For the characteristics of high frequency of switching devices in the photovoltaic inverter and complexity of circuit topology, the insulated gate bipolar transistor driving protection circuit is designed which is suitable for photovoltaic inverter. The circuit which is based on thick film structure of M57962L has isolated power supply and threshold voltage regulator circuits. The control and regulation can be achieved precisely for the threshold voltage of over current protection. The internal structure of M57962L has been analyzed here. The process of slow turn off action is observed practically. For the circuit periphery parameters of M57962L, the general calculation methods are given according to various models and the level of protection for IGBT. The practical application shows that the method is correct and effective.

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Periodical:

Applied Mechanics and Materials (Volumes 130-134)

Pages:

4118-4121

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.130-134.4118

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Online since:

October 2011

Authors:

Shu Qiu Gong, Ming Tang, Li Yan Cui

Keywords:

Driving Circuit, Insulated Gate Bipolar Transistor (IGBT), Inverter, M57962L, Slow Turn Off

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