Analysis and Design of IGBT Driving and Protection Circuit for Photovoltaic Grid-Connected Inverter

Abstract:

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For the characteristics of high frequency of switching devices in the photovoltaic inverter and complexity of circuit topology, the insulated gate bipolar transistor driving protection circuit is designed which is suitable for photovoltaic inverter. The circuit which is based on thick film structure of M57962L has isolated power supply and threshold voltage regulator circuits. The control and regulation can be achieved precisely for the threshold voltage of over current protection. The internal structure of M57962L has been analyzed here. The process of slow turn off action is observed practically. For the circuit periphery parameters of M57962L, the general calculation methods are given according to various models and the level of protection for IGBT. The practical application shows that the method is correct and effective.

Info:

Periodical:

Edited by:

Han Zhao

Pages:

4118-4121

DOI:

10.4028/www.scientific.net/AMM.130-134.4118

Citation:

S. Q. Gong et al., "Analysis and Design of IGBT Driving and Protection Circuit for Photovoltaic Grid-Connected Inverter", Applied Mechanics and Materials, Vols. 130-134, pp. 4118-4121, 2012

Online since:

October 2011

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Price:

$35.00

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