Radiation Effect of Metal-Oxide-Semiconductor Structure Irradiated by Electron

Jian Xin Zhang; Jun Xing Liu; You Bao Wan

doi:10.4028/www.scientific.net/AMM.161.140

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 161Radiation Effect of Metal-Oxide-Semiconductor...

Radiation Effect of Metal-Oxide-Semiconductor Structure Irradiated by Electron

Abstract:

×MOS structure has been radiated by electron, dosage is 2×10¹³ cm^-2 ~ 1×10¹⁴ cm^-2. The interface density distributing in energy band has been tested by quasi-static method. It is found that interface density increase while electron dosage increasing. When dosage arrived to 1×10¹⁴ cm^-2, interface density arrives to 10¹³(cm^-2eV^-1),which is two order of magnitude higher than without irradiation. Further more, the shapes of density increase curve are completely different.

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Periodical:

Applied Mechanics and Materials (Volume 161)

Pages:

140-143

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.161.140

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Online since:

March 2012

Authors:

Jian Xin Zhang, Jun Xing Liu, You Bao Wan

Keywords:

Electron, Interface Density, MOS, Radiation

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References

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DOI: 10.1063/1.332323

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