Effect of Deposition Conditions on the Characterization of Cu(In,Ga)Se2 Precursor Films by Sputtering Process

Yi Cheng Lin; Jia Hong Ke; C.C. Chen

doi:10.4028/www.scientific.net/AMM.189.63

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 189Effect of Deposition Conditions on the...

Effect of Deposition Conditions on the Characterization of Cu(In,Ga)Se₂ Precursor Films by Sputtering Process

Abstract:

In this study, Cu(In,Ga)Se2 (CIGS) thin films were deposited onto bi-layer Mo coated soda-lime glass by sputtering a chalcopyrite CIGS quaternary alloy target. The influence of sputtering power and substrate temperature on the characterization of CIGS precursor films was investigated. Experimental results demonstrate that the CIGS quaternary target has the characteristics of chalcopyrite structures. The samples deposited at a sputter power of 1.5 W/cm2 (both as-deposited and after annealing) exhibited superior uniformity, and the phenomenon of composition loss resulting from annealing was not drastic. The composition distribution of as-deposited film produced at a substrate temperature 373 K approached that of ideal stoichiometry.

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Applied Mechanics and Materials (Volume 189)

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63-68

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.189.63

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Online since:

July 2012

Authors:

Yi Cheng Lin, Jia Hong Ke, C.C. Chen

Keywords:

Chalcopyrite, Precursor, Solar Cell, Sputtering

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