Influence of Grain Composition and Sintering Temperature on Performance of Silicon Carbide Refractory Material
Silicon carbide with diffierent granularity and three grain composition was used as raw material. Silicon carbide refractory material was prepared in oxidizing atmosphere at 1400 °C, 1450 °C and 1500 °C for 3 h. Performence of samples were researched by measurements of apparent porosity, bulk density, bending strength at room temperature, thermal shock resistance and thermal expansion rate, and analyzed by SEM. The results showed that samples sintered at 1400 °C have low thermal expansion rate and apparent porosity, high bending strength and bulk density, good thermal shock resistance, compact texture as well. It can be deduced that (1.0-0.5mm) / (0.5-0.1mm) / (45μm) / (5μm) = 50 / 17/ 20/ 13 is the best grain composition to improve integrated performance of silicon carbide refractory material.
Xianghua Liu, Zhenhua Bai, Yuanhua Shuang, Cunlong Zhou and Jian Shao
M. Y. Zheng et al., "Influence of Grain Composition and Sintering Temperature on Performance of Silicon Carbide Refractory Material", Applied Mechanics and Materials, Vols. 217-219, pp. 1131-1134, 2012