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PSP Statistical Modeling for 40nm MOSFET

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Abstract:

This paper presents a statistical model based on PSP MOSFET model in 40nm CMOS technology. Nine parameters are modified in PSP model to establish the statistical model. The simulation result verifies the accuracy of the model, the error of σ value is controlled within 5% and the error of mean value within 2%. The proposed model could optimize the circuit design in nanometer CMOS technology node.

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Periodical:

Applied Mechanics and Materials (Volumes 236-237)

Pages:

144-148

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.236-237.144

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Online since:

November 2012

Authors:

Hui Zhou, Xi Li, Zheng Ren, Meng Di Zhang, Li Jie Sun, Shao Jian Hu, Yan Ling Shi

Keywords:

Process Variation, PSP MOSFET Model, Statistical Modeling

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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References

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