PSP Statistical Modeling for 40nm MOSFET

Hui Zhou; Xi Li; Zheng Ren; Meng Di Zhang; Li Jie Sun; Shao Jian Hu; Yan Ling Shi

doi:10.4028/www.scientific.net/AMM.236-237.144

Paper Titles

Tribological Study of Xanthate-Containing Acetic Ester as Additives in Hydrogenated Oil
p.123

Researches Regarding the Nature of the Embeddings in the Cast Pieces Made of Aluminium Alloys
p.128

Poly Gate Proximity Effect Modeling for 40nm CMOS
p.134

The Pretreatment of Ramie Fiber Material with Supercritical CO₂ Fluid
p.139

PSP Statistical Modeling for 40nm MOSFET
p.144

Low-Alkali Cement Composition Using the Green Tea and Industrial-by Products
p.149

Numerical Simulation of Failure Mode and Crack Propagation of Marble with Pre-Existing Fissure
p.153

The Improvement of Pcb’S Electroplating Uniformity
p.158

Applied Research of Smelting High Nitrogen Steels by Bottom-Blowing Nitrogen
p.163

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 236-237PSP Statistical Modeling for 40nm MOSFET

PSP Statistical Modeling for 40nm MOSFET

Abstract:

This paper presents a statistical model based on PSP MOSFET model in 40nm CMOS technology. Nine parameters are modified in PSP model to establish the statistical model. The simulation result verifies the accuracy of the model, the error of σ value is controlled within 5% and the error of mean value within 2%. The proposed model could optimize the circuit design in nanometer CMOS technology node.

You might also be interested in these eBooks

Advanced Technology for Manufacturing Systems and Industry

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 236-237)

Pages:

144-148

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.236-237.144

Citation:

Cite this paper

Online since:

November 2012

Authors:

Hui Zhou, Xi Li, Zheng Ren, Meng Di Zhang, Li Jie Sun, Shao Jian Hu, Yan Ling Shi

Keywords:

Process Variation, PSP MOSFET Model, Statistical Modeling

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] YueYun Yu, Xi Li, Zheng Ren, et al.: A New BSIM3v3 SPICE Model for Reliability of Hot Carrier Injection Effect in MOSFET, ECS Transactions, 27(1) 275-280 (2010)

DOI: 10.1149/1.3360631

Google Scholar

[2] Binjie Cheng, Daryoosh Dideban, et al.: Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP, IEEE Design & Test of Computers, 26-35 (2010)

DOI: 10.1109/mdt.2010.53

Google Scholar

[3] N. Moezi, et al.: Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study, Microelectron. J (2011), doi: 10.1016/j. mejo.2011.07.011

DOI: 10.1016/j.mejo.2011.07.011

Google Scholar

[4] X. Li, C. C. McAndrew, et al.: Statistical Modeling With the PSP MOSFET Model, IEEE Transactions on computer-aided design of integrated circuits and system, Vol. 29, NO. 4, April (2010)

DOI: 10.1109/tcad.2010.2042892

Google Scholar

[5] X. Li, Wenmin Wu, et al.: Benchmarking the PSP compact model for MOS transistors, IEEE International Conference on Microelectronic Test Structures, 259-264 (2007)

Google Scholar

[6] I. M. Kang, H. Shin: Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model, Electronics Letters, Vol. 46, NO.11(2010)

DOI: 10.1049/el.2010.0763

Google Scholar

[7] Information on http://cp.literature.agilent.com/litweb/pdf/iccap2008addon1/icmdl/icmdl037.html

Google Scholar