Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

Xiao Hua Sun; Shuang Hou; Zhi Meng Luo; Cai Hua Huang; Zong Zhi Hu

doi:10.4028/www.scientific.net/AMM.252.211

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 252Enhanced the Dielectric and Tunable Properties of...

Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

Abstract:

Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

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Periodical:

Applied Mechanics and Materials (Volume 252)

Pages:

211-215

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.252.211

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Online since:

December 2012

Authors:

Xiao Hua Sun, Shuang Hou, Zhi Meng Luo, Cai Hua Huang, Zong Zhi Hu

Keywords:

BZNT, Dielectric Property, RF Magnetron Sputtering, Tunability

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