Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

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Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

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Edited by:

Helen Zhang, David Jin and X.J. Zhao

Pages:

211-215

Citation:

X. H. Sun et al., "Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process", Applied Mechanics and Materials, Vol. 252, pp. 211-215, 2013

Online since:

December 2012

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$38.00

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