Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process
Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.
Helen Zhang, David Jin and X.J. Zhao
X. H. Sun et al., "Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process", Applied Mechanics and Materials, Vol. 252, pp. 211-215, 2013