Design of Broadband GaN HEMT Power Amplifier with Ku Band

Abstract:

A broadband power amplifier module based on GaN HEMT operating Ku band is designed. TGF2023-02 Chip of GaN HEMT from TriQuint is modeled first. And then the module consists of two stages amplifiers. The first stage amplifier is single-stage amplifier and the second is two-way combiner amplifier. Wilkinson power divider, DC bias circuits and microstrip matching circuits are simulated and designed carefully. Simulation results showed that the amplifier module exhibits a power gain of 7 dB, power added efficiency of 13.9%, and an output power of 16 W under Vds=28 V, Vgs=-3.6 V, CW operating conditions at the frequency of 15 GHz.

• Periodical: Applied Mechanics and Materials (Volumes 263-266)
• Pages: 39-42
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.263-266.39
• Online since: December 2012
• Authors: Zhi Qun Cheng, Li Wei Jin, Wen Shi
• Keywords: Gan HEMT, Modeling, Power Amplifier, Wilkinson Power Divider

References

[1] W.J. Luo, X.J. Chen, L. Pang, T.T. Yuan and X.Y. Liu: Microelectronics Journal Vol. 43 (2012), p.569

[2] Liu Dan, Wang Liang, Chen Xiaojuan: Microwave and Millimeter Wave Circuits and System Technology: (2012), P. 1

[3] Chen Chi, Hao Yue, Feng Hui, Gu Wenping, Li ZhiMING, Hu Shigang, and Ma Teng: Journal of Semiconductors Vol. 43 (2012), p.13

[4] Information on http://www.triquint.com/products/p/TGF2023-02

[5] H. Chen, L.-J. Jiang, X.-F, and Y.-X. Zhang: ICMTCE, (2011), p.152

[6] B.A: IEEE Trans. MTT Vol. 28 (1980), p.488

[7] Hossein Mashad Nemati, Paul Saad, Christian Fager, and Kristoffer Andersson: IEEE microwave magazine Vol. 12 (2011), p.81