The Study of Improving High Voltage LIGBT Substrate Leakage Current

Yi Rong Tu; Jeng Gong

doi:10.4028/www.scientific.net/AMM.263-266.60

Paper Titles

Design of Broadband GaN HEMT Power Amplifier with Ku Band
p.39

Design of Resonant Soft-Switching Grid-Connected Inverter
p.43

Flash Sliver Prevents Laser Penetrating Organic Materials
p.48

The Design of Controller in AVS Video Decoder Chip Based on Openrisc
p.53

The Study of Improving High Voltage LIGBT Substrate Leakage Current
p.60

A Design of Charger with Intelligent Charging and Capacity Detection
p.64

A Study of Tri-Axial Fluxgate Magnetometer
p.69

An Active Capacitance Multiplier Based on Switched-Capacitor DC-DC Converter
p.76

An Examination of the Traits and Genesis of Chaohu Stone, East China
p.80

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 263-266The Study of Improving High Voltage LIGBT...

The Study of Improving High Voltage LIGBT Substrate Leakage Current

Abstract:

This paper aims to the research of high voltage lateral insulated gate bipolar transistor (LIGBT) and proposes the design for reducing the substrate leakage current of this device. The junction between LIGBT’s p-type substrate and n-epi layer may have a large electrical field and causes the hole current to flow during the turn-on state. To prevent this substrate leakage current, an n-type buried layer (NBL) and a p-type buried layer (PBL) are used. The double reverse biased pn-junction structure effectively reduces the vertical electric field such that the substrate current is reduced by four orders of magnitude. The break down voltage of the LIGBT is not hurt by this added structure at all.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 263-266)

Pages:

60-63

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.263-266.60

Citation:

Cite this paper

Online since:

December 2012

Authors:

Yi Rong Tu*, Jeng Gong

Keywords:

LIGBT, N-Type Buried Layer, P-Type Buried Layer, Substrate Leakage Current

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] S. Duan, M. Qiao, K. Mao, B. Zhong , L. Jiang, B. Zhang. International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Nov. 2010.

Google Scholar

[2] David W.Green, Shyam Hardikar, Ramakrishna Tadikonda, Mark Sweent, Konstantin V. Vershinin, and E. M .Sankara Narayanan. IEEE Tranksactions on Electron Devices Vol.52, No.7, July 2005.

Google Scholar

[3] E. Gevinti, L. Cerati, M. Sambi, M. Dissegna, L. Cecchetto, A. A. Tazzoli , G. Meneghesso. EOS/ESD symposium, (2008)

DOI: 10.1109/eosesd.2007.4401732

Google Scholar

[4] J. B .Cheng, B. Zhang, B. X. Duan and Z. J. Li. Electronics Letters, Vol. 47, No. 20, 29th September 2011.

Google Scholar

[5] B. Bakeroot, J. Doutreloigne, and P. Moens. IEEE Electron Device Letters, Vol. 27, No. 6, June 2006.

Google Scholar

[6] B. Bakeroot, J. Doutreloigne, P. Vanmeebeek, and P. Moens. Proceedings of the19th International Symposium on Power Semiconductor Devices & ICs, May 27-30, 2007.

Google Scholar

[7] Lei Lei Xiaorong, Luo Zhan Zhan, Wei Zhang ,Bo Zhang, Zhaohi Li. International Conference on Solid-State and Integrated-Circuit Technology. Oct, 2008.

DOI: 10.1109/icsict.2008.4734504

Google Scholar

[8] B. Bakeroot, J. Doutreloigne, P. Vanmeerbeek, and P. Moens. IEEE Electron Device Letters, Vol. 28, No. 5, May 2007.

DOI: 10.1109/led.2007.895402

Google Scholar