Growth Time Influence on Polycrystalline α-HgI2 Films

Gong Long Liu; Lei Ma; Yang Liao; Wei Min Shi; Wei Guang Yang; Yue Lu Zhang

doi:10.4028/www.scientific.net/AMM.271-272.263

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 271-272Growth Time Influence on Polycrystalline α-HgI2...

Growth Time Influence on Polycrystalline α-HgI₂ Films

Abstract:

Polycrystalline α-HgI2 films have been grown on TFT substrates using hot-wall vapor phase deposition (HWPVD) with the different growth times. The influence of different growth times (1 hour, 2 hours, 3 hours, 4 hours) on the structural and electrical properties of the polycrystalline α-HgI2 films is investigated. Metallurgical microscope, scan electron microscopes (SEM) and X-ray diffraction (XRD) characterization and the electric transport properties were investigated by the I-V characteristics. The polycrystalline α-HgI2 films growth by 3 hours show more better performance than others. So we use it preparation a detector.Finally, capacitance frequency characteristics analysis showed the detector have good performance.

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Applied Mechanics and Materials (Volumes 271-272)

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263-267

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https://doi.org/10.4028/www.scientific.net/AMM.271-272.263

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Online since:

December 2012

Authors:

Gong Long Liu, Lei Ma, Yang Liao, Wei Min Shi, Wei Guang Yang, Yue Lu Zhang

Keywords:

Characterization, Uniformity, Vapor Phase Deposition, α-HgI₂ Films

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