Effect of High-K Material on Gate Threshold Voltage for Double-Gate Tunnel FET

Yu Chen Li; He Ming Zhang; Hui Yong Hu; Yu Ming Zhang; Bin Wang; Chun Yu Zhou; Yong Le Lou

doi:10.4028/www.scientific.net/AMM.275-277.1984

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 275-277Effect of High-K Material on Gate Threshold...

Effect of High-K Material on Gate Threshold Voltage for Double-Gate Tunnel FET

Abstract:

The effect of high-k material on gate threshold voltage for double gate tunnel field-effect transistor (DG-TFET) is studied in this paper. By physically derived the model of threshold voltage for DG-TFET, the quantitative relationship between threshold voltage and gate length is also discussed. It is shown that the proposed model is consistent with the simulation results, and can also easily predict the improved performance on the gate threshold voltage when using high-κ dielectrics and the limited effect on gate threshold voltage when changing the gate length.

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Applied Mechanics and Materials (Volumes 275-277)

Pages:

1984-1987

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.275-277.1984

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Online since:

January 2013

Authors:

Yu Chen Li, He Ming Zhang, Hui Yong Hu, Yu Ming Zhang, Bin Wang, Chun Yu Zhou, Yong Le Lou

Keywords:

Gated P-I-N Diode, High-k Material, TFET, Threshold Voltage

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