The Study on Surface Morphology and Residual Stress of Al₂O₃ Film

Abstract:

The aluminum oxide (Al₂O₃) films are grown on n-type Si-(100) substrate by electron beam evaporation at substrate temperature 500°C~800°C. The Al₂O₃ film surface morphology is characterized by atom force microscopy (AFM) to evaluate the grain microstructure, and the residual stress was investigated by wafer stress analyzer. The results show that different substrate temperature is important condition to the properties of Al₂O₃ film. Microstructure characterization indicates that the film surface at low substrate temperature is smoother, and the surface roughness of these Al₂O₃ films is in the range 1-6 nm. The residual stress increases with increasing the substrate temperature, while the stress decreases after annealing in N₂ condition. It also can be concluded that the microstructure is correlated with residual stress.

• Periodical: Applied Mechanics and Materials (Volumes 275-277)
• Pages: 2006-2009
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.275-277.2006
• Online since: January 2013
• Authors: Ying Dong Pu, Wu Tang, Yu Tong Yang
• Keywords: Microstructure, Residual Stress, Surface Morphology

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