Degradation Mechanism of III-V Triple Junction Solar Cells Analyzed Using Step Stress Tests

Abstract:

We analyzed the degradation mechanism of GaInP/GaInAs/Ge triple junction solar cells without coating any protective film. Gradual degradation in the dark and light I-V characteristics of the solar cells were observed after the step stress accelerated degradation tests (SSADT) were conducted on these devices sequentially at 90, 110, 130 and 150°Cfor 25, 55, 85 and 135 hours, respectively. The recombination current in the depletion region at the chip perimeter of solar cells, resulting in the decrease of open-circuit voltage (VOC), fill factor (FF) and efficiency, is suggested to be the important degradation mechanism for GaInP/GaInAs/Ge triple junction solar cells.

• Periodical: Applied Mechanics and Materials (Volumes 284-287)
• Pages: 281-286
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.284-287.281
• Online since: January 2013
• Authors: Hwen Fen Hong, Jin Wei, Mei Hui Chiang, Zun Hao Shih, Wu Yih Uen, Yi Ru Hsu, Cheng Ban Chung, Yueh Mu Lee
• Keywords: Degradation, III-V Triple Junction Solar Cells, Recombination Current, Step Stress Accelerated Degradation Tests

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