Application of Pico-Second Laser on Low-K Wafer Dicing

Shih Jeh Wu; Weike Vic Chao

doi:10.4028/www.scientific.net/AMM.302.3

Paper Titles

Preface and Organizing Committees

Application of Pico-Second Laser on Low-K Wafer Dicing
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Histomorphometric Analysis: Effects of Simvastatin on Bone Mass, Microarchitecture and Turnover in Normal Rat
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 302Application of Pico-Second Laser on Low-K Wafer...

Application of Pico-Second Laser on Low-K Wafer Dicing

Abstract:

Moore’s law by scaling conventional CMOS involves huge lots of technology evolution in both aspects of electronics material and micromachining. One of the most promising modern innovations is the 3D IC and the key material to the 3D IC is the low-K (dielectric) materials. Since the new generation low-K material is rather porous and fragile in structure strength, conventional singulation methods including the dicing saw and nano-second laser can not be applied. New machine modality has to be used to avoid the cracking and excessive debris contamination. In this paper we demonstrate the application of pico-second laser on the grooving machining of low-K wafer. The results show that the removal of low-K material is up to the production standard: smooth groove bottom with minimal debris. However, as the groove line involves metal pads the laser power is partially consumed by the ablation of the metallic material the depth is not controlled ideally. With proper adjustment of the machine parameter such as laser power, focal depth and pulse energy the problem can be resolved.

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Applied Mechanics and Materials (Volume 302)

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3-7

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.302.3

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Online since:

February 2013

Authors:

Shih Jeh Wu, Weike Vic Chao

Keywords:

Low-K Wafer, Micro Machining, Pico-Second Laser

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