The Patented Project Design for Preparing CuInSe₂ Film

Abstract:

The patent provides one method for preparing of CuInSe₂ (CIS) photoelectric thin film used in solar cell. It belongs to the field of photoelectric film preparation technology. The patent includes the following steps. First clean glass substrate; Secondly dissolve CuCl₂•2H₂O, InCl₃•4H₂O, SeO₂ by different solvents, then mix the solution and adjust the pH of solution to obtain homogeneous precursor solution; Thirdly drop the precursor solution to the glass substrate, spin coating and dry for precursor film. Then put the precursor film into sealed container which contains the hydrazine hydrate (N₂H₄•H₂O), and keep the sample not in contact with hydrazine. Finally the sample is heated at some temperature, which makes it cool and dry naturally, CuInSe₂ photovoltaic thin film is obtained. The method used in the patent does not require high temperature, high vacuum conditions and sophisticated equipment. So it has the advantages of low cost, high efficiency and simplicity. It is easy to control the composition and structure of the CuInSe₂ photovoltaic thin film. And the CuInSe₂ photovoltaic thin film is pure phase, continuous and uniform. So it is one feasible process to prepare high performance copper indium selenide thin film.

• Periodical: Applied Mechanics and Materials (Volume 310)
• Pages: 38-41
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.310.38
• Online since: February 2013
• Authors: Ke Gao Liu, Nian Jing Ji, Nai Gen Li
• Keywords: CuInSe₂, Photoelectricity Thin Film, Preparation

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