Red Light Emission from Silicon Created by Self-Ion Implantation and Thermal Annealing

Abstract:

Silicon substrates were implanted with Si ions at an energy of 60 keV to a dose of 5×10¹⁵ cm^-2 followed by a thermal annealing at various temperatures up to 950 oC. Photoluminescence (PL) and infrared absorption (IRA) techniques have been used to characterize these samples. The PL peak positions at 2.07 eV and 1.93 eV undergo redshifts with the increasing annealing temperature. The two IRA peaks at 1080 cm^-1 and 800 cm^-1 are ascribed to the Si-O-Si asymmetric stretching and the Si-O bending vibration, respectively. The experimental results indicate that Si nanocrystals embedded in silicon oxide layer can be formed at the annealing temperature 800 oC or higher.

• Periodical: Applied Mechanics and Materials (Volume 320)
• Pages: 109-113
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.320.109
• Online since: May 2013
• Authors: Sai Lu, Chong Wang, Wen Jie Wang, Jie Yu, Jie Yang, Yu Yang
• Keywords: Annealing, Ion Implantation, Photoluminescence (PL), Si Nanocrystals

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