Research on the Performance of MSM Gan Ultraviolet Photoelectric Detector

Yuan Yuan Sun; Qiu Rui Jia; Li Min Song; Zheng Li; Shi Bo Liu

doi:10.4028/www.scientific.net/AMM.321-324.408

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 321-324Research on the Performance of MSM Gan Ultraviolet...

Research on the Performance of MSM Gan Ultraviolet Photoelectric Detector

Abstract:

GaN ultraviolet photoelectric detector have advantages of high quantum efficiency, work at room temperature, high-temperature resistance, good corrosion resistance, resistance to radiation ability etc. Therefore, research of GaN ultraviolet photoelectric detector has important application value in the spacecraft, fire monitoring, ultraviolet communication and other fields. MSM Schottky type ultraviolet photoelectric detector has been prepared by a metal organic chemical vapor phase epitaxial deposition method in growth of high quality GaN semiconductor film on the sapphire substrate. Then optical and electrical properties of device have been studied by analyzing its illumination and light response performance. The detector sample has high pressure resistance and response degree. After annealed treatment, the ultraviolet detector has response peak for 0.19 A/W and response time for 70ns.

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Periodical:

Applied Mechanics and Materials (Volumes 321-324)

Pages:

408-411

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.321-324.408

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Online since:

June 2013

Authors:

Yuan Yuan Sun, Qiu Rui Jia, Li Min Song, Zheng Li, Shi Bo Liu

Keywords:

Detector, Device, GaN, MOCVD, MSM, Photoelectric, Ultraviolet

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