Direct Extraction Method of InP HBT Small-Signal Model

Hai Yan Lu; Wei  Cheng; Gang Chen; Tang Sheng Chen; Chen  Chen

doi:10.4028/www.scientific.net/AMM.347-350.1621

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 347-350Direct Extraction Method of InP HBT Small-Signal...

Direct Extraction Method of InP HBT Small-Signal Model

Abstract:

An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the values of parasitic parameters. The initial values of the parasitic are extracted by using a set of test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. The extraction procedure uses a set of closed-form expressions derived without any approximation. An experimental validation is carried out on three HBT devices and satisfactory results are obtained up to 20 GHz.

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Periodical:

Applied Mechanics and Materials (Volumes 347-350)

Pages:

1621-1624

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.347-350.1621

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Online since:

August 2013

Authors:

Hai Yan Lu, Wei Cheng, Gang Chen, Tang Sheng Chen, Chen Chen

Keywords:

InP HBT, Model, Semiconductor

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References

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