Study on Transient Thermal Resistance of Microwave Pulse Power Device

Xiao Ming Ding; Gang Chen; Dian Li  Wang

doi:10.4028/www.scientific.net/AMM.347-350.1630

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 347-350Study on Transient Thermal Resistance of Microwave...

Study on Transient Thermal Resistance of Microwave Pulse Power Device

Abstract:

Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390 °C. Using micro-infrared thermal image instrument, compares the microwave transient infrared thermal image test results of sample devices which chips welded process under two different process condition. Measured results show that the thermal resistance after chip welded process optimized is twenty percent smaller than before. It describes the importance of controlling the chip welded process parameters during assembly.

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Periodical:

Applied Mechanics and Materials (Volumes 347-350)

Pages:

1630-1634

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.347-350.1630

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Online since:

August 2013

Authors:

Xiao Ming Ding, Gang Chen, Dian Li Wang

Keywords:

Junction Temperature, Pulse, Thermal, Transient Infrared Thermal Image

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