Current Automatic Control Technology for n-Type Macroporous Silicon Photo-Electrochemical Etching

Abstract:

The relationship between the etching current density and the macropore diameter was studied in the macroporous silicon (MPS) photo-electrochemical (PEC) etching. By measuring the depth of the channel with different etching time, the variation of critical current density with time was calculated. The importance to real-time adjust the etching current was discussed in the etching process. Based on the PSoC chip, an automatic control system for etching current was designed. The MPS growth was realized with the pore diameter constant using the automatic control system for etching current with a pre-set curve of etching current versus time.

• Periodical: Applied Mechanics and Materials (Volumes 423-426)
• Pages: 113-116
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.423-426.113
• Online since: September 2013
• Authors: Xiao Na Li, Guo Zheng Wang*, Feng Yuan Yu, Yao Zhang, Yong Zhao Liang, Jin Chai, Ji Kai Yang, Qing Duo Duanmu
• Keywords: Critical Current Density, Etching Current, Macroporous Silicon, Photo-Electrochemical Etching

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