Fabrication Using Focused Ion Beam Processing of Devices Employing Silicon-Based Nanowires Synthesized by Vapor-Liquid-Solid Growth

Abstract:

Undoped and B-doped silicon-based nanowires (SiNWs) were synthesized by vapor-liquid-solid growth, and SiNW devices using Au electrodes were prototyped using focused ion beam (FIB) processing. Needle-shaped thin SiNWs were formed at a substrate temperature between 1170 and 1313 °C. The average and minimum diameters of the B-doped SiNWs were 72 nm and 52 nm, respectively. According to the current-voltage characteristics, SiNW devices have ohmic properties, and the estimated resistivity of the undoped and B-doped SiNWs are about 3.8 × 10³ Ωcm and 1.7 × 10³ Ωcm, respectively.

• Periodical: Applied Mechanics and Materials (Volumes 423-426)
• Pages: 125-129
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.423-426.125
• Online since: September 2013
• Authors: Hayato Sone*, Yousuke Nakamura, Yasuyuki Suda, Sumio Hosaka
• Keywords: Boron Doping, Current-voltage characteristics, FIB, Focused Ion Beam (FIB), Nanowire Device, Si-Based Nanowire, Vapor-Liquid-Solid Growth, VLS

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