Top-Down Formation of GaN Nanocone Arrays for Application in Field Emission

Abstract:

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We present a novel method to fabricate uniform GaN nanocone arrays (GNA) using Nickel-nanoisland masks. The nanoscale conelike arrays with high density can be formed over the entire 2-inch wafer by inductively couple plasma etching. The results of X-ray diffraction exhibit significant decrease on the (102) reflection in GaN sample with the GNA. Field-emission measurements show that the GNA with sharp tips have a turn-on field of ~ 5.5 V/μm. It is believed that the high aspect ratio resulting from the conelike morphology is responsible for the enhancement of the field-emission properties of GNA.

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Periodical:

Edited by:

Ran Chen

Pages:

2514-2518

DOI:

10.4028/www.scientific.net/AMM.44-47.2514

Citation:

X. Z. Wang et al., "Top-Down Formation of GaN Nanocone Arrays for Application in Field Emission", Applied Mechanics and Materials, Vols. 44-47, pp. 2514-2518, 2011

Online since:

December 2010

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$35.00

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