Top-Down Formation of GaN Nanocone Arrays for Application in Field Emission

Abstract:

We present a novel method to fabricate uniform GaN nanocone arrays (GNA) using Nickel-nanoisland masks. The nanoscale conelike arrays with high density can be formed over the entire 2-inch wafer by inductively couple plasma etching. The results of X-ray diffraction exhibit significant decrease on the (102) reflection in GaN sample with the GNA. Field-emission measurements show that the GNA with sharp tips have a turn-on field of ~ 5.5 V/μm. It is believed that the high aspect ratio resulting from the conelike morphology is responsible for the enhancement of the field-emission properties of GNA.

• Periodical: Applied Mechanics and Materials (Volumes 44-47)
• Pages: 2514-2518
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.44-47.2514
• Online since: December 2010
• Authors: Xin Zhong Wang, Guang Hui Yu, Shi Guo Li, Cheng Guo Wu
• Keywords: Field Emission, Gallium Nitride (GaN), ICP, Nanocone

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