Effect of Thermal Annealing in NH3 Ambient on Nanoporous n-GaN and Subsequent Epilayer
Thermal annealing effects on the recovery of surface-etched nanoporous n-type gallium nitride (GaN) templates for growth optimization have been investigated. The electrical and optical performances of nanoporous GaN templates can be improved by annealed at 950°C within the NH3 ambient, leading to the quality increase for subsequent growth. Mechanisms responsible for reducing defects and recovering nonstoichiometric layer are then discussed.
X. Z. Wang et al., "Effect of Thermal Annealing in NH3 Ambient on Nanoporous n-GaN and Subsequent Epilayer", Applied Mechanics and Materials, Vols. 44-47, pp. 3016-3020, 2011