Effect of Thermal Annealing in NH3 Ambient on Nanoporous n-GaN and Subsequent Epilayer

Abstract:

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Thermal annealing effects on the recovery of surface-etched nanoporous n-type gallium nitride (GaN) templates for growth optimization have been investigated. The electrical and optical performances of nanoporous GaN templates can be improved by annealed at 950°C within the NH3 ambient, leading to the quality increase for subsequent growth. Mechanisms responsible for reducing defects and recovering nonstoichiometric layer are then discussed.

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Periodical:

Edited by:

Ran Chen

Pages:

3016-3020

DOI:

10.4028/www.scientific.net/AMM.44-47.3016

Citation:

X. Z. Wang et al., "Effect of Thermal Annealing in NH3 Ambient on Nanoporous n-GaN and Subsequent Epilayer", Applied Mechanics and Materials, Vols. 44-47, pp. 3016-3020, 2011

Online since:

December 2010

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Price:

$35.00

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