Effect of Thermal Annealing in NH3 Ambient on Nanoporous n-GaN and Subsequent Epilayer

Xin Zhong Wang; Guang Hui Yu; Shi Guo Li; Cheng Guo Wu

doi:10.4028/www.scientific.net/AMM.44-47.3016

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 44-47Effect of Thermal Annealing in NH3 Ambient on...

Effect of Thermal Annealing in NH₃ Ambient on Nanoporous n-GaN and Subsequent Epilayer

Abstract:

Thermal annealing effects on the recovery of surface-etched nanoporous n-type gallium nitride (GaN) templates for growth optimization have been investigated. The electrical and optical performances of nanoporous GaN templates can be improved by annealed at 950°C within the NH3 ambient, leading to the quality increase for subsequent growth. Mechanisms responsible for reducing defects and recovering nonstoichiometric layer are then discussed.

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Periodical:

Applied Mechanics and Materials (Volumes 44-47)

Pages:

3016-3020

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.44-47.3016

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Online since:

December 2010

Authors:

Xin Zhong Wang, Guang Hui Yu, Shi Guo Li, Cheng Guo Wu

Keywords:

AAO, Gallium Nitride (GaN), ICP, Recovery

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